MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone

Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8.0 × 10.0 × 1.5 mm Max • High efficiency  47 Typ at 33.5 dBm for GSM850  47 Typ at 32.5 dBm for DCS1

文件：138.5 Kbytes 页数：16 Pages

RENESAS

瑞萨

MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone

文件：123.56 Kbytes 页数：14 Pages

RENESAS

瑞萨

MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone

Renesas

瑞萨

WIRE FORM FAN GUARD (92mm)

文件：211.6 Kbytes 页数：1 Pages

QUALTEK

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