丝印：R1X；Package：DFN1006-2；1-Line Bi-directional TVS Diode

Features © Low operating voltage: + 18V | @ Ultra low capacitance:0.3pF typical © Ultra low leakage: nA level © Low operating voltage: | © Low clamping voltage | © 2-pin leadless package @ Complies with following standards: © — IEC 61000-4-2 (ESD) immunity test Air discharge: £20kV | C

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TECHPUBLIC

台舟电子

Transient Voltage Suppressors for ESD Prot

Description The SXESDMC2FD18VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical

文件：523.75 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体

Transient Voltage Suppressors for ESD Protection

Description The SXESDNC2FD18VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical

文件：547.78 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体

DFN1006-2L

PRISEMI

芯导科技

上传：深圳市跃创芯科技有限公司

DFN16-2L

PRISEMI芯导

上传：深圳市光与电子有限公司