PESD2V8Y1BSF中文资料安世数据手册PDF规格书

1. General description

Extremely low clamping, extremely low capacitance bidirectional ElectroStatic Discharge (ESD)

protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2

(SOD962-2) leadless, ultra-small Surface-Mounted Device (SMD) package designed to protect one

signal line from the damage caused by ESD and other transients.

2. Features and benefits

• Bidirectional ESD protection of one line

• ESD protection up to ±14 kV contact discharge according to IEC 61000-4-2

• Backwards compatible to USB3.2 due to VRWM = 2.8 V

• Extremely low diode capacitance: Cd = 0.16 pF at 1 MHz

• Extremely low clamping and trigger voltage (Vt1 = 6.9 V TLP) to protect sensitive transceivers

• Extremely low insertion loss: -0.29 dB at 10 GHz

• Extremely low return loss: -20.6 dB at 10 GHz

• RF performance does not degrade over the operation voltage range

• Extremely low leakage current: < 1 nA at 2.8 V

• Extremely low inductance protection path to ground

• Very high surge robustness: 5.5 A for a 8/20 μs pulse

• IEC 61000-4-4 robust up to level 3 on I/O ports (corresponds to 40 A into a 50 Ohm

termination)

• Ultra-small SMD package

3. Applications

• Cellular handsets and accessories

• Portable electronics

• Communication systems

• Computers and peripherals

• USB4, USB3.2 and Thunderbolt 3 and 4 data lines