PESD12VS2UQ

Marking：E3；Package：SOT663；Double ESD protection diodes in SOT663 package

1.1Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultra smallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotect uptotwosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Appl

PESD12VS2UQ

Double ESD protection diodes in SOT663 package

PESD12VS2UQ,115

Package：SOT-663；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电路保护 TVS - 二极管 描述：TVS DIODE 12VWM 35VC SOT663

Nexperia USA Inc.

PESD12VS2UT

Solid-statesilicon-avalanchetechnology

Features ■300Wpeakpulsepower(tp=8/20μs) ■Bidirectionalandunidirectionalconfigurations ■Solid-statesilicon-avalanchetechnology ■Lowclampingvoltage ■Lowleakagecurrent ■Lowcapacitance(Cj=60pFtyp.) ■Protectiontwodatalines ■IEC61000-4-2±30kVcontact±30kVair ■

PESD12VS2UT

DoubleESDprotectiondiodesinSOT23package

FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/20μs •Lowclampingvoltage:V(CL)R=20VatIpp=18A •Ultra-lowreverseleakagecurrent:IRM23kV •IEC61000-4-2;level4(ESD) •IEC61000-4-5(su

PESD12VS2UT

DoubleESDprotectiondiodesinSOT23package

PESD12VS2UT

LowVCEsat(BISS)transistors

PESD12VS2UT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION Uni-directionaldoubleESDprotectiondiodesinaSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/2