BREAKOUT, BNC MALE TO INSULATED SPADE LUGS

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N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：424.82 Kbytes 页数：5 Pages

SAMHOP

三合微科

N-Channel 30-V (D-S) MOSFET

文件：961.17 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：424.82 Kbytes 页数：5 Pages

SAMHOP

三合微科