PASTERNACK ENTERPRISES

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PASTERNACK

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.72Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

Single Diode Ultra Fast Recovery Diode

Features • Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 30 A, di/dt = 100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 30 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

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RENESAS

瑞萨

600V - 30A - Single Diode Ultra Fast Recovery Diode

文件：73.99 Kbytes 页数：4 Pages

RENESAS

瑞萨