PE29102中文资料High-speed FET Driver数据手册pSemi规格书

描述 Description

NOT RECOMMENDED FOR NEW DESIGNS (NRND)This product is not recommended for new designs. For more information, please contact your local sales representative.
The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. High switching speeds result in smaller peripheral components and enable innovative designs for applications such as Class D audio and wireless charging.

特性 Features

• High- and low-side FET drivers
• Dead-time control
• Fast propagation delay, 9 ns
• Tri-state enable mode
• Sub-nanosecond rise and fall time
• 2A/4A peak source/sink current
• Packaging: Flip chip

简介

PE29102属于集成电路（IC）的栅极驱动器。由制造生产的PE29102栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。