N-Channel MOSFET uses advanced SGT technology

文件：862.05 Kbytes 页数：4 Pages

DOINGTER

杜因特

MOSFET

Semione

芯电元

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

文件：88.84 Kbytes 页数：7 Pages

PHI

PHI

SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

文件：28.41 Kbytes 页数：2 Pages

EIC

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3

文件：166.8 Kbytes 页数：20 Pages

PHI

PHI