PDZVTF6.8B

ZenerDiode

PESMB6.8A

Lowprofilepackage

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha 10/1000μswaveform,repetitiverate(duty cycle):0.01% •Excellentclampingcapability •Very

PESMB6.8CA

Lowprofilepackage

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha 10/1000μswaveform,repetitiverate(duty cycle):0.01% •Excellentclampingcapability •Very

PRSB6.8C

STANDARDTVSCOMPONENTS

PRSB6.8C

STANDARDTVSCOMPONENTS

PRSB6.8C

LOWCAPACITANCEMINIATURETVSARRAY

PRSB6.8C

1-LineBi-directionalTVSDiode

Features ®Ultrasmallpackage:1.0x0.6x0.5mm ®Ultralowcapacitance:15pFtypical ®Ultralowleakage:nAlevel ®Lowoperatingvoltage:+5v ®Lowclampingvoltage ®2-pinleadlesspackage ®Complieswithfollowingstandards: eo—IEC61000-4-2(ESD)immunitytest Airdi

PRSB6.8CF

STANDARDTVSCOMPONENTS

FEATURES ✔ESDProtection>40kilovolts ✔10WattsPeakPulsePowerperLine(tp=10/1000µs) ✔BidirectionalConfiguration ✔ProtectsOneDataLine ✔LowClampingVoltage ✔LowCapacitance ✔EasyPlacementforManufacturing ✔RoHSCompliant APPLICATIONS ✔NoiseSuppressionforDataLines

PRSB6.8CT

LOWCAPACITANCEMINIATURETVSARRAY

DESCRIPTION ThePRSB6.8CTisatransientvoltagesuppressorarray(TVS)designedtoprotectapplicationssuchaswirelesstelecommunicationdevices,SMARTphonesandportableelectronics.ThePRSB6.8CTisavailableinabidirectionalconfigurationwithaworkingvoltageof4.7Vandaminimumbrea

PRSB6.8D

LOWCAPACITANCETVSCOMPONENT

DESCRIPTION ThePRSB6.8Disatransientvoltagesuppressorarraydesignedtoprotectapplicationssuchaswirelesstelecommunicationdevicesandportableelectronics.Thisdeviceisavailableinabidirectionalconfigurationwithaworkingvoltageof4.7Vandaminimumbreakdownvoltageof5.7V.