丝印：7T；Package：SOT23；50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123ET-Q 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • 500 mA output current capability • Reduces component c

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50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

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500 mA, 50 V NPN resistor-equipped transistors

General description NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features ■ 500 mA output current capability ■ ± 10 resistor ratio tolerance ■ Built-in bias resistors ■ AEC-Q101 qualified ■ Simplifies circuit d

文件：3.59479 Mbytes 页数：27 Pages

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500 mA, 50 V NPN resistor-equipped transistors

Features 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count  10 resistor ratio tolerance AEC-Q101 qualified High temperature applications up to 175 °C

文件：3.59374 Mbytes 页数：27 Pages

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500 mA, 50 V PNP resistor-equipped transistors

Features 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count  10 resistor ratio tolerance AEC-Q101 qualified High temperature applications up to 175 °C

文件：3.64448 Mbytes 页数：27 Pages

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