丝印：E3；Package：SOT-346；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs ■ 500 mA output current capability ■ ±10 resistor ratio tolerance Applications ■ Digital

文件：68.04 Kbytes 页数：10 Pages

PHI

PHI

丝印：E3；Package：SOT-346；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs ■ 500 mA output current capability ■ ±10 resistor ratio tolerance Applications ■ Digital

文件：131.77 Kbytes 页数：10 Pages

恩XP

丝印：E3；Package：SC-59A；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Features * Built-in bias resistors * Simplifies circuit design * 500 mA output current capability * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：245.81 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：E3；Package：SOT-346；Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI