丝印：26；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123ET-Q 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces pick and pl

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NEXPERIA

安世

50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (SC-101) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PDTA123ET-Q

Nexperia

安世

Low VCEsat (BISS) transistors

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PHI

飞利浦

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm

文件：91.91 Kbytes 页数：14 Pages

PHI

飞利浦