PNP resistor-equipped transistors; R1 = 47 k廓, R2 = 22 k廓

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning”for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampli

文件：188.89 Kbytes 页数：14 Pages

恩XP

丝印：TA144W；Package：SC-43；PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：420.75 Kbytes 页数：15 Pages

NEXPERIA

安世

NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：422.13 Kbytes 页数：15 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：422.13 Kbytes 页数：15 Pages

NEXPERIA

安世