50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and recommended for use in automotive applications Applications • Digital applications i

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PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

PNP Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTC144EM-Q

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50 V, 100 mA PNP resistor-equipped transistors

General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 100 mA output current capability ■ reduced pick and place costs

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50 V, 100 mA NPN resistor-equipped transistors

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.78427 Mbytes 页数：21 Pages

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50 V, 100 mA PNP resistor-equipped transistors

Features and benefits  100 mA output current capability  built-in bias resistors  simplifies circuit design  reduces component count  reduced pick and place costs  low package height of 0.37 mm  AEC-Q101 qualified  suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.80866 Mbytes 页数：21 Pages

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