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PDTA123E

PNP resistor-equipped transistors

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PDTA123E

PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PDTA123E

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123E_SER

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123E_SER

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123E_SERIES

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123EE

PNP resistor-equipped transistors

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PDTA123EE

PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PDTA123EE

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123EE

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123EE

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123EEF

PNP resistor-equipped transistors

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PDTA123EEF

PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PDTA123EEF

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123EEF

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123EEF

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123EK

PNP resistor-equipped transistors

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PDTA123EK

PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PDTA123EK

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123EK

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    PDTA123

  • 功能描述:

    开关晶体管 - 偏压电阻器 PNP W/RES 50V

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶体管极性:

    NPN/PNP

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    直流集电极/Base Gain hfe

  • Min:

    200 mA

  • 最大工作频率:

    集电极—发射极最大电压

  • VCEO:

    50 V

  • 集电极连续电流:

    150 mA

  • 功率耗散:

    200 mW

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
NXPSemiconductors
07+/08+
SOT-416SC-75-3
115
询价
NXP
2016+
SOT323
6523
房间原装进口现货假一赔十
询价
NXP
2020+
SOT323
9000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NXP
24+
SOD
5000
只做原装公司现货
询价
Nexperia
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
NXPSEMI
2021+
N/A
6800
只有原装正品
询价
NXP
23+
SOT323
8560
受权代理!全新原装现货特价热卖!
询价
NXPSEMICO
23+
NA
46486
专做原装正品,假一罚百!
询价
Nexperia
22+23+
SOT23
55449
绝对原装正品现货,全新深圳原装进口现货
询价
NXP
23+
SOT323
999999
原装正品现货量大可订货
询价
更多PDTA123供应商 更新时间2024-9-26 15:30:00