PD85035TR-E规格书应用电路批发供应-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PD85035TR-E	文件：376.64 Kbytes Page：15 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excell 文件：376.64 Kbytes 页数：15 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD85035TR-E	文件：384.36 Kbytes Page：15 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs 文件：384.36 Kbytes 页数：15 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD85035TR-E	文件：300 bytes Page：1 Pages	射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans	ST 意法半导体	ST
PD85035TR-E	文件：100 bytes Page：1 Pages	Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：托盘类别：分立半导体产品晶体管 - FET，MOSFET - 射频描述：TRANS RF N-CH FET POWERSO-10RF	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多PD85035TR-E供应商更新时间2021-9-14 10:50:00