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PD488588FF中文资料288M bits Direct Rambus DRAM数据手册Micron规格书

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厂商型号

PD488588FF

功能描述

288M bits Direct Rambus DRAM

制造商

Micron Micron Technology

中文名称

美光 美光科技有限公司

数据手册

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更新时间

2025-9-25 22:50:00

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PD488588FF规格书详情

描述 Description

The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
The µPD488588 is 288Mbits Direct Rambus DRAM (RDRAM), organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25ns per two bytes (10ns per sixteen bytes).
The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The Direct RDRAM’s four banks support up to four simultaneous transactions.
System oriented features for mobile, graphics and large memory systems include power management, byte masking.
The µPD488588 is offered in a CSP horizontal package suitable for desktop as well as low-profile add-in card and mobile applications. Direct RDRAMs operate from a 2.5V supply.

特性 Features

• Highest sustained bandwidth per DRAM device
   — 1.6 GB/s sustained data transfer rate
   — Separate control and data buses for maximized
      efficiency
   — Separate row and column control buses for easy
      scheduling and highest performance
   — 32 banks: four transactions can take place
      simultaneously at full bandwidth data rates
• Low latency features
   — Write buffer to reduce read latency
   — 3 precharge mechanisms for controller flexibility
   — Interleaved transactions
• Advanced power management:
   — Multiple low power states allows flexibility in power
      consumption versus time to active state
   — Power-down self-refresh
• Overdrive current mode
• Organization: 2K bytes pages and 32 banks, x 18
• Uses Rambus Signaling Level (RSL) for up to 800MHz operation
• Package : 80-ball FBGA (µBGA) (17.16 × 10.2)

技术参数

  • 型号:

    PD488588FF

  • 制造商:

    ELPIDA

  • 制造商全称:

    Elpida Memory

  • 功能描述:

    288M bits Direct Rambus DRAM for High Performance Solution

供应商 型号 品牌 批号 封装 库存 备注 价格
富士厂家型号
23+
NA
6500
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NIEC
24+
module
6000
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SHARP/夏普
25+
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65428
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SHARP/夏普
24+
DIP-2
880000
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NIEC
专业模块
MODULE
8513
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PIONEER
23+
BGAQFP
8659
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询价
PRISEMI/芯导
24+
SOIC-16
900000
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PION
23+
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7000
绝对全新原装!100%保质量特价!请放心订购!
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TI/德州仪器
23+
SOT-553
50000
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原厂
2023+
模块
600
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