Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 75 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 75 A • Easy to Parallel Operation Typical Applications • Solar • Energy Storage • Industrial Motor Control

文件：104.01 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Power Diode Bare Die

1200 V, 75 A,  Gen VII, Fast Recovery Diode • Advanced Gen VII Technology\n• Low Forward Voltage\n• Easy to Parallel Operation;

ONSEMI

安森美半导体

Full - Bridge NPT IGBT Power Module

文件：196.48 Kbytes 页数：5 Pages

Microsemi

美高森美

Full - Bridge NPT IGBT Power Module

文件：261.17 Kbytes 页数：5 Pages

Microsemi

美高森美

Full - Bridge NPT IGBT Power Module

文件：283.81 Kbytes 页数：5 Pages

ADPOW