Diode - Power, Bare Die Gen VII, Fast Recovery 1200 V, 60 A

Features  Advanced Gen VII Technology  Fast and Soft Recovery  Maximum Junction Temperature 175C  Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 60 A  Easy to Parallel Operation Typical Applications  Solar  Energy Storage  Industrial Motor Control

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ONSEMI

安森美半导体

Power Diode Bare Die

1200 V, 60 A,  Gen VII, Fast Recovery Diode • Advanced Gen VII Technology\n• Fast and Soft Recovery\n• Low Forward Voltage\n• Easy to Parallel Operation;

ONSEMI

安森美半导体

SDUR60H120W ULTRAFAST RECTIFIER

Applications: Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultras

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