Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 55 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 55 A • Easy to Parallel Operation Typical Applications • Solar • Energy storage • Industrial motor control

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ONSEMI

安森美半导体

Power Diode Bare Die

1200 V, 55 A,  Gen VII, Fast Recovery Diode • Advanced Gen VII Technology\n• Fast and Soft Recovery\n• Low Forward Voltage\n• Easy to Parallel Operation;

ONSEMI

安森美半导体

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