MOSFET ??Power, N-Channel 100 V, 1.8 m

Features • Typical RDS(on) = 1.4 m at VGS = 10 V • Typical Qg(tot) = 95 nC at VGS = 10 V • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant

文件：275.68 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET, N-Channel, 100 V, 1.8 mΩ, Bare Die

PCFA86062 is a 100 V 1.8 mΩ Automotive Power MOSFET Bare die with a die size of 6.604 mm x 3.683 mm. It can be used to build power module with Al wirebonding. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive Qualified;

ONSEMI

安森美半导体

CODEC LSI for Facsimile Images

Overview The MN86062 is a high-speed LSI codec for compressing and decompressing images using the MH, MR, and MMR standard compression methods specified in the ITU-T T.4 and T.6 recommendation. Registers and other settings provide flexible support for a variety of processing. Features • Compres

文件：47.04 Kbytes 页数：7 Pages

PANASONIC

松下

MOSFET ??Power, N-Channel 100 V, 1.8 m

Features • Typical RDS(on) = 1.4 m at VGS = 10 V • Typical Qg(tot) = 95 nC at VGS = 10 V • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant

文件：243.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体