PCF8582C-2P中文资料飞利浦数据手册PDF规格书

GENERAL DESCRIPTION

The PCF85xxC-2 is a family of floating gate Electrically Erasable Programmable Read Only Memories (EEPROMs) with 2, 4 and 8 kbits (256, 512 and 1024×8-bit). By using an internal redundant storage code it is fault tolerant to single bit errors. This feature dramatically increases the reliability compared to conventional EEPROMs. Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier.

FEATURES

• Low power CMOS:

– maximum operating current:

2.0 mA (PCF8582C-2)

2.5 mA (PCF8594C-2)

4.0 mA (PCF8598C-2)

– maximum standby current 10µA (at 6.0 V), typical 4µA

• Non-volatile storage of:

– 2 kbits organized as 256×8-bit (PCF8582C-2)

– 4 kbits organized as 512×8-bit (PCF8594C-2)

– 8 kbits organized as 1024×8-bit (PCF8598C-2)

• Single supply with full operation down to 2.5 V

• On-chip voltage multiplier

• Serial input/output I2C-bus

• Write operations:

– byte write mode

– 8-byte page write mode (minimizes total write time per byte)

• Read operations:

– sequential read

– random read

• Internal timer for writing (no external components)

• Power-on-reset

• High reliability by using a redundant storage code

• Endurance: 1000000 Erase/Write (E/W) cycles at Tamb=22°C

• 10 years non-volatile data retention time

• Pin and address compatible to: PCF8570, PCF8571, PCF8572 and PCF8581.