PCF85103C-2P中文资料飞利浦数据手册PDF规格书

Description

The PCF85103C-2 is a floating gate Electrically Erasable Programmable Read Only Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an internal redundant storage code, it is fault tolerant to single bit errors. This feature dramatically increases the reliability compared to conventional EEPROMs. Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier.

Features

■ Low power CMOS:

◆ 2.0 mA maximum operating current

◆ maximum standby current 10 µA (at 6.0 V), typical 4 µA

■ Non-volatile storage of 2 kbits organized as 256 × 8-bit

■ Single supply with full operation down to 2.5 V

■ On-chip voltage multiplier

■ Serial input/output I2C-bus

■ Write operations:

◆ byte write mode

◆ 8-byte page write mode (minimizes total write time per byte)

■ Read operations:

◆ sequential read

◆ random read

■ Internal timer for writing (no external components)

■ Internal power-on reset

■ 0 kHz to 100 kHz clock frequency

■ High reliability by using a redundant storage code

■ Endurance: 1,000,000 Erase/Write (E/W) cycles at Tamb = 22 °C

■ 10 years non-volatile data retention time

■ Pin compatible to: PCF8570, PCF8571, PCF8572, PCA8581, PCF8582, and PCF85102

■ ESD protection exceeds 2000 V HBM per JESD22-A114, 150 V MM per JESD22-A115, and 1000 V CDM per JESD22-C101

■ Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 mA

■ Offered in DIP8 and SO8 packages.