256 x 8-bit CMOS EEPROMs with I2C-bus interface

Description The PCF85102C-2 is a floating gate Electrically Erasable Programmable Read Only Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an internal redundant storage code, it is fault tolerant to single bit errors. This feature dramatically increases the reliability

文件：99.29 Kbytes 页数：20 Pages

PHI

飞利浦

256 x 8-bit CMOS EEPROM with I2C-bus interface

文件：120.43 Kbytes 页数：20 Pages

PHI

飞利浦

带有I2C总线接口的256 x 8位CMOS EEPROM

PCF85102C-2是一款浮动门控电可擦可编程只读存储器(EEPROM)，具备2 kbits（256 x 8位）非易失性存储。通过使用内部冗余存储代码，对单个位元错误有容错功能。相比传统的EEPROM，此功能显著提升了可靠性。由于使用全CMOS技术，所以功耗很低。使用电压倍增器片上生成编程电压。\n通过串行I²C总线接收和发送数据字节。可将最多八个PCF85102C-2器件连接至I²C总线。通过三个地址输入（A0、A1和A2）完成芯片选择。 低功率CMOS： 2.0 mA最大工作电流\n最大待机电流为10 uA（6.0 V时），典型为4 uA\n\n组织为256 x 8位的2 kbits非易失性存储器\n单电源，满负载工作低至2.5 V\n片上电压倍增器\n串行输入/输出I²C总线\n写入操作： 字节写入模式\n8字节页面写入模式（每个字节的总写入时间最小化）\n\n读取操作： 连续读取\n随机读取\n\n用于写入的内部定时器（无外部组件）\n内部上电复位\n0 kHz至100 kHz时钟频率\n通过使用冗余存储代码实现高可靠性\n承受：Tamb = 22 Cel时为1,000,000个擦除/写入(E/W)周期\n10年非易失性数;

恩XP

恩智浦

256 x 8-bit CMOS EEPROMs with I2C-bus interface

Description The PCF85102C-2 is a floating gate Electrically Erasable Programmable Read Only Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an internal redundant storage code, it is fault tolerant to single bit errors. This feature dramatically increases the reliability

文件：99.29 Kbytes 页数：20 Pages

PHI

飞利浦

256 x 8-bit CMOS EEPROM with I2C-bus interface

文件：120.43 Kbytes 页数：20 Pages

PHI

飞利浦

256 x 8-bit CMOS EEPROMs with I2C-bus interface

Description The PCF85102C-2 is a floating gate Electrically Erasable Programmable Read Only Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an internal redundant storage code, it is fault tolerant to single bit errors. This feature dramatically increases the reliability

文件：99.29 Kbytes 页数：20 Pages

PHI

飞利浦