LCD controller/driver

GENERAL DESCRIPTION The PCF2105 integrated circuit is similar to the PCF2114x (described in the “PCF2116 family” data sheet) but does not contain the high voltage generator of that device. Furthermore, a fast I2C-bus interface (400 kHz) is provided. The PCF2105 is optimized for chip-on-gl

文件：289.01 Kbytes 页数：48 Pages

PHI

PHI

LCD controller/driver

GENERAL DESCRIPTION The PCF2105 integrated circuit is similar to the PCF2114x (described in the “PCF2116 family” data sheet) but does not contain the high voltage generator of that device. Furthermore, a fast I2C-bus interface (400 kHz) is provided. The PCF2105 is optimized for chip-on-gl

文件：289.01 Kbytes 页数：48 Pages

PHI

PHI

LCD controller/driver

GENERAL DESCRIPTION The PCF2105 integrated circuit is similar to the PCF2114x (described in the “PCF2116 family” data sheet) but does not contain the high voltage generator of that device. Furthermore, a fast I2C-bus interface (400 kHz) is provided. The PCF2105 is optimized for chip-on-gl

文件：289.01 Kbytes 页数：48 Pages

PHI

PHI

LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr

文件：1.38329 Mbytes 页数：25 Pages

TI

德州仪器

LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr

文件：1.21212 Mbytes 页数：28 Pages

TI

德州仪器

LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26393 Mbytes 页数：32 Pages

TI

德州仪器