首页 >PCAL6408ABSHP>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
CMOSAsynchronousSerialManchesterAdapter(ASMA) TheHD-6408isaCMOS/LSIManchesterEncoder/Decoderforcreatingaveryhighspeedasynchronousserialdatabus.TheEncoderconvertsserialNRZdata(typicallyfromashiftregister)toManchesterIIencodeddata,addingasyncpulseandparitybit.TheDecoderrecognizesthissyncpulseandide | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
CMOSAsynchronousSerialManchesterAdapter TheHD-6408isaCMOS/LSIManchesterEncoder/Decoder forcreatingaveryhighspeedasynchronousserialdatabus. TheEncoderconvertsserialNRZdata(typicallyfromashift register)toManchesterIIencodeddata,addingasyncpulse andparitybit.TheDecoderrecognizesthissyncpulseand | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
CMOSAsynchronousSerialManchesterAdapter(ASMA) | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
CMOSAsynchronousSerialManchesterAdapter(ASMA) TheHD-6408isaCMOS/LSIManchesterEncoder/Decoderforcreatingaveryhighspeedasynchronousserialdatabus.TheEncoderconvertsserialNRZdata(typicallyfromashiftregister)toManchesterIIencodeddata,addingasyncpulseandparitybit.TheDecoderrecognizesthissyncpulseandide | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
N-ChannelEnhancementModePowerMOSFET Description TheHM6408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.Thisdeviceissuitableforuseasabatteryprotectionorinotherswitchingapplication. Features ●VDS=20V,ID=5.5A RDS(ON) | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell |
产品属性
- 产品编号:
PCAL6408ABSHP
- 制造商:
NXP USA Inc.
- 类别:
集成电路(IC) > I/O 扩展器
- 包装:
卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
- I/O 数:
8
- 接口:
I²C,SMBus
- 中断输出:
是
- 特性:
POR
- 输出类型:
开漏极,推挽式
- 电流 - 灌/拉输出:
10mA,25mA
- 电压 - 供电:
1.65V ~ 5.5V
- 工作温度:
-40°C ~ 85°C
- 安装类型:
表面贴装型
- 封装/外壳:
16-VFQFN 裸露焊盘
- 供应商器件封装:
16-HVQFN(3x3)
- 描述:
IC I/O EXPANDER 8BIT I2C 16HVQFN
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP(恩智浦) |
23+ |
NA |
6524 |
原装正品,现货库存,1小时内发货 |
询价 | ||
NXP USA Inc. |
24+ |
16-VFQFN 裸露焊盘 |
25000 |
in stock接口IC-原装正品 |
询价 | ||
NXP Semiconductors |
20+ |
2000 |
NXP专卖,进口原装深圳现货 |
询价 | |||
NXP(恩智浦) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NXP |
23+ |
HVQFN16
|
6000 |
全新原装现货、诚信经营! |
询价 | ||
NXP/原装 |
NA |
10150 |
原装现货当天可交货,长期备货支持BOM配单账期 |
询价 | |||
NXP |
24+ |
NA |
6000 |
只做原装 有挂有货 假一赔十 |
询价 | ||
NXP(恩智浦) |
2023+ |
HVQFN-16(3x3) |
4550 |
全新原装正品 |
询价 | ||
NXP(恩智浦) |
23+ |
NA |
17316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
NXP USA Inc. |
21+ |
16-HVQFN(3x3) |
56200 |
一级代理/放心采购 |
询价 |
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