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HD-6408

CMOSAsynchronousSerialManchesterAdapter(ASMA)

TheHD-6408isaCMOS/LSIManchesterEncoder/Decoderforcreatingaveryhighspeedasynchronousserialdatabus.TheEncoderconvertsserialNRZdata(typicallyfromashiftregister)toManchesterIIencodeddata,addingasyncpulseandparitybit.TheDecoderrecognizesthissyncpulseandide

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HD-6408

CMOSAsynchronousSerialManchesterAdapter

TheHD-6408isaCMOS/LSIManchesterEncoder/Decoder forcreatingaveryhighspeedasynchronousserialdatabus. TheEncoderconvertsserialNRZdata(typicallyfromashift register)toManchesterIIencodeddata,addingasyncpulse andparitybit.TheDecoderrecognizesthissyncpulseand

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HD-6408

CMOSAsynchronousSerialManchesterAdapter(ASMA)

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HD-6408

CMOSAsynchronousSerialManchesterAdapter(ASMA)

TheHD-6408isaCMOS/LSIManchesterEncoder/Decoderforcreatingaveryhighspeedasynchronousserialdatabus.TheEncoderconvertsserialNRZdata(typicallyfromashiftregister)toManchesterIIencodeddata,addingasyncpulseandparitybit.TheDecoderrecognizesthissyncpulseandide

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HM6408

N-ChannelEnhancementModePowerMOSFET

Description TheHM6408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.Thisdeviceissuitableforuseasabatteryprotectionorinotherswitchingapplication. Features ●VDS=20V,ID=5.5A RDS(ON)

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HX6408

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-EFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-EFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-EHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-EHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-ENM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-ENN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-ERM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-ERN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KEFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KEFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KEHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KEHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KENM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KENN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

产品属性

  • 产品编号:

    PCAL6408ABSHP

  • 制造商:

    NXP USA Inc.

  • 类别:

    集成电路(IC) > I/O 扩展器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • I/O 数:

    8

  • 接口:

    I²C,SMBus

  • 中断输出:

  • 特性:

    POR

  • 输出类型:

    开漏极,推挽式

  • 电流 - 灌/拉输出:

    10mA,25mA

  • 电压 - 供电:

    1.65V ~ 5.5V

  • 工作温度:

    -40°C ~ 85°C

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    16-VFQFN 裸露焊盘

  • 供应商器件封装:

    16-HVQFN(3x3)

  • 描述:

    IC I/O EXPANDER 8BIT I2C 16HVQFN

供应商型号品牌批号封装库存备注价格
NXP(恩智浦)
23+
NA
6524
原装正品,现货库存,1小时内发货
询价
NXP USA Inc.
24+
16-VFQFN 裸露焊盘
25000
in stock接口IC-原装正品
询价
NXP Semiconductors
20+
2000
NXP专卖,进口原装深圳现货
询价
NXP(恩智浦)
22+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NXP
23+
HVQFN16
6000
全新原装现货、诚信经营!
询价
NXP/原装
NA
10150
原装现货当天可交货,长期备货支持BOM配单账期
询价
NXP
24+
NA
6000
只做原装 有挂有货 假一赔十
询价
NXP(恩智浦)
2023+
HVQFN-16(3x3)
4550
全新原装正品
询价
NXP(恩智浦)
23+
NA
17316
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
NXP USA Inc.
21+
16-HVQFN(3x3)
56200
一级代理/放心采购
询价
更多PCAL6408ABSHP供应商 更新时间2024-6-6 15:09:00