PCA24S08ADP数据手册恩XP中文资料规格书

描述 Description

The PCA24S08A provides 8192 bits of serial Electrically Erasable and Programmable Read-Only Memory (EEPROM) organized as 1024 words of 8 bits each. Data bytes are received and transmitted via the serial I²C-bus.
Access permissions limiting reads or writes are set via the I²C-bus to isolate blocks of memory from improper access.
The PCA24S08A is intended to be pin compatible with standard 24C08 serial EEPROM devices except for pins 1, 2, and 3, which are address pins in the standard part. Other exceptions to the PCA24S08A serial EEPROM data sheet are noted in Section 6.6.
All bits are sent to or read from the device, most significant bit first, in a manner consistent with the 24C08 serial EEPROM. The bit fields in this document are correspondingly listed with the MSB on the left and the LSB on the right.
The EEPROM memory is broken up into 8 blocks of 1 kbit (128 bytes) each. Within each block, the memory is physically organized in to 8 pages of 128 bits (16 bytes) each. In addition to these 8 kbits, there are two more 128-bit pages that are used to store the access protection and ID information. There are a total of 8448 bits of EEPROM memory available in the PCA24S08A.
Access protection (both read and write) is organized on a block basis for block 1 through block 7 and on a page and a block basis for block 0. Protection information for these blocks and pages is stored in one of the additional pages of EEPROM memory that is addressed separately from the main data storage array. SeeSection 6.4 for more details.
The ID value is located in the ID page of the EEPROM, the second of the additional 16 byte pages.
Writes from the serial interface may include from one byte to 16 bytes at a time, depending on the protocol followed by the bus master. All page accesses must be properly aligned to the internal EEPROM page.
The EEPROM memory offers an endurance of 100,000 write cycles per byte, with 10 year data retention. Writes to the EEPROM take less than 5 ms to complete.
After manufacturing, all EEPROM bits will be set to a value of ‘1’.

特性 Features

Non-volatile storage of 8 kbits organized as 8 blocks of 128 bytes each
I²C-bus interface logic
Compatible with 24C08 serial EEPROM, and alternate source of Atmel AT24RF08C without the RF interface
Write operation: Byte write mode
16-byte page write mode
Read operation: Sequential read
Random read
Programmable access protection to limit reads and writes
Lock/unlock function
Write protect feature protecting the full memory array against write operations
Self timed write cycle
Internal power-on reset
High reliability: Ten years non-volatile data retention time
100,000 write cycle endurance
Low power CMOS technology
Operating power supply voltage range of 2.5 V to 3.6 V
0 Hz to 400 kHz clock frequency
ESD protection exceeds 2000 V HBM per JESD22-A114, 200 V MM per JESD22-A115 and 1000 V CDM per JESD22-C101
Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 mA
Packages offered: SO8, TSSOP8