Photocoupler with Built-in Breakdown Diode for Surge Voltage Absorption

■ Features 1. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio ( CTR: MIN. 1 500 at I F = 5mA ) 3. Mini-flat package 4. Applicable to soldering reflow 5. Available tape-packaged products ■ Applications 1. Programmable controllers

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SHARPSharp Corporation

夏普

Photocoupler with Built-in Breakdown Diode for Surge Voltage Absorption

Sharp

夏普

Package：4-SMD，鸥翼；包装：卷带（TR） 类别：隔离器 光隔离器 - 晶体管，光电输出 描述：OPTOISOLATOR 3.75KV TRANS 4SMD

Sharp Microelectronics

NPN Silicon RF Transistor

DESCRIPTION The START450 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It offers performance

文件：70.33 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

NPN Silicon RF Transistor

DESCRIPTION The START450 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It offers performance

文件：70.33 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

THREE CHANNELS HIGH SIDE SMART SOLID STATE RELAY

DESCRIPTION The VN450 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side connected to ground. This device has three independant channels and three diagnostics. Built-in thermal shut-down protects th

文件：261.93 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体