首页 >PC2763T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=30mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz •Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=30mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz •Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz •Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Supplyvoltage:VCC=2.7to3.3V •Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz •Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
3V,SUPERMINIMOLDMEDIUMPOWERSIMMICAMPLIFIER | CEL California Eastern Labs | CEL | ||
3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheµPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=3 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheµPC2762TB,µPC2763TBandµPC2771TBaresiliconmonolithicintegratedcircuitsdesignedasamplifierformobilecommunications.TheseICsoperateat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. TheseICismanufacturedusingNEC’s20GHzfTN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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