Package：3-XDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 2A DFN1010D-3

Nexperia USA Inc.

NPN low VCEsat (BISS) transistor

DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5230T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation

文件：47.87 Kbytes 页数：7 Pages

PHI

PHI

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

30 V, 2 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative to MOSFETs in specific applications. APPLICATIONS •Power managem

文件：472.46 Kbytes 页数：8 Pages

NEXPERIA

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