30 V, 2 A NPN/NPN low VCEsat transistor

NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: PBSS5230PAP-Q

Nexperia

安世

30 V, 2 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5230QA. 2. Features and benefits • Very low collector-

文件：730.47 Kbytes 页数：17 Pages

NEXPERIA

安世

NPN low VCEsat (BISS) transistor

DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5230T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation

文件：47.87 Kbytes 页数：7 Pages

PHI

飞利浦

SPDT High Power UltraCMOS??RF Switch

Product Description The PE4230 UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC through 3000 MHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt

文件：258.75 Kbytes 页数：7 Pages

Peregrine

Shorty Cable Holders

文件：104.83 Kbytes 页数：1 Pages

Heyco

Shorty Cable Holders

文件：104.83 Kbytes 页数：1 Pages

Heyco