首页 >PBSS4160QA-QZ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
60V,1ANPNlowVCEsat(BISS)transistor DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage. PNPcomplement:PBSS5160T. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiency,reducesheatgeneration •Reducesprinted-circuitboardarearequired • | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
LowVCEsat(BISS)transistors | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
60V,1ANPNlowVCEsat(BISS)transistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5160T. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiency,reducesheatgeneration •Reducesprint | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNlowVCEsat(BISS)transistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5160T-Q. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiency,reducesheatgeneration •Reducespri | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNlowVCEsat(BISS)transistor Generaldescription LowVCEsat(BISS)NPNtransistorinaSOT666plasticpackage. PNPcomplement:PBSS5160V. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboarda | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
60V,1ANPNlowVCEsat(BISS)transistor 1.Generaldescription LowVCEsat(BISS)NPNtransistorinaSOT666ultrasmallandflatleadSurface-MountedDevice (SMD)plasticpackage. PNPcomplement:PBSS5160V 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM • | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNlowVCEsatBISStransistor | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
VoltageandSafetyMarkerBooks | PANDUITPanduit Corp Panduit公司Panduit科技有限公司 | PANDUIT |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
