PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits •Verylowcollec

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpower DFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits •Verylowcollect

PBSS4160PANPS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. NPN/NPNcomplement:PBSS4160PANS.PNP/PNPcomplement:PBSS5160PAPS. Features

PBSS4160PANS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5160QA. 2.Featuresandbenefits •Verylowcollector-

PBSS4160QA-Q

60V,1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-Mounted Device(SMD)plasticpackagewithvisibleandsolderablesidepads. 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabi

PBSS4160T

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5160T. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiency,reducesheatgeneration •Reducesprint

PBSS4160T

60V,1ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage. PNPcomplement:PBSS5160T. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiency,reducesheatgeneration •Reducesprinted-circuitboardarearequired •

PBSS4160T

LowVCEsat(BISS)transistors

PBSS4160T

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.