PBSS4112PAN-Q中文资料安世数据手册PDF规格书

1. General description

NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-

Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4112PANP-Q

2. Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• Reduced Printed-Circuit Board (PCB) requirements

• High energy efficiency due to less heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)