首页 >PBS5350D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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PNPtransistor DESCRIPTION PNPlowVCEsattransistorinaSC-74plasticpackage. NPNcomplement:PBSS4350D. FEATURES •Highcurrentcapabilities •LowVCEsat. APPLICATIONS •Heavydutybatterypoweredequipment(Automotive,TelecomandAudio/Video)suchasmotorandlampdrivers •VCEsatcriticalapplica | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
LowVCEsat(BISS)transistors | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcurrentcapability •Highefficiencyduetolessheatgenera | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcurrentcapability •Highefficiencyduetolessheatgene | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS 2.Featuresandbenefits •DFN2020D-3(SOT1061D)package •Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS-Q 2.Featuresandbenefits •DFN2020D-3(SOT1061D)package •Lowcollector-emittersatura | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Highpowerdissipation(830mW) DESCRIPTION PNPlowVCEsattransistorinaSOT54plasticpackage. NPNcomplement:PBSS4350S. FEATURES •Highpowerdissipation(830mW) •Ultralowcollector-emittersaturationvoltage •3Acontinuouscurrent •Highcurrentswitching •Improveddevicereliabilityduetoreducedheat g | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
50V,2.7ANPN/NPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,2.7ANPN/PNPlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,2.7APNP/PNPlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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