SD1035-TB

10ASCHOTTKYBARRIERDIODE

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

SHJC1035

TANTALUMCHIP

SHJD1035

TANTALUMCHIP

SHJLD1035

TANTALUMCHIP-LOWESR

SHJLE1035

TANTALUMCHIP-LOWESR

SHP1035P

ShieldHighPowerInductor

・Lowleakagefluxtotheoutsidebycompleteclosedmagneticcircuit structure. ・CorrespondtolargesaturationcurrentbyhighBmNi-Znferritecore.

SI1035

WIRELESSPRODUCTSELECTORGUIDE

SI1035-A-GM

UltraLowPower128K,LCDMCUFamily

SI1035X

ComplementaryN-andP-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET:1.5VRated •VerySmallFootprint •High-SideSwitching •LowOn-Resistance:    N-Channel,5    P-Channel,8 •LowThreshold:±0.9V(typ.) •FastSwitchingSpeed:45ns(typ.) •1.5VOpera

SI1035X

ComplementaryN-andP-Channel20V(D-S)MOSFET