1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 页数：11 Pages

OSRAM

艾迈斯欧司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 页数：11 Pages

OSRAM

艾迈斯欧司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 页数：11 Pages

OSRAM

艾迈斯欧司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 页数：11 Pages

OSRAM

艾迈斯欧司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 页数：11 Pages

OSRAM

艾迈斯欧司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 页数：11 Pages

OSRAM

艾迈斯欧司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 页数：11 Pages

OSRAM

艾迈斯欧司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 页数：11 Pages

OSRAM

艾迈斯欧司朗

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ● 1/2.7” ● 1600x1400 ● 8/10/12-bit ● 2.79 μm 90 fps global shutter with CDS High sensitivity Small die size achieved via state-of-the-art stacked BSI technology Class leading QE at 940 nm combined with high sensitivity. Industry leading PLS at 940 nm Digital CDS and row noise c

文件：954.85 Kbytes 页数：11 Pages

OSRAM

艾迈斯欧司朗

Packaged PIN Diodes

文件：389.27 Kbytes 页数：7 Pages

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