N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

文件：108.95 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET

ST

意法半导体

N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：93.29 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10783 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

文件：108.95 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体