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STB75NF75

N-channel75V-0.0095Q-80A-TO-220-TO-220FP-D2PAKSTripFET??IIPowerMOSFET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

STB75NF75

N-channel75V-0.0095廓-80A-TO-220-TO-220FP-D2PAKSTripFET??IIPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB75NF75

N-CHANNEL75V-0.0095ohm-80ATO-220/TO-220FP/D짼PAKSTripFET??IIPOWERMOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET™processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecom

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB75NF75L

N-CHANNEL75V-0.009ohm-75AD2PAK/I2PAK/TO-220STripFET??IIPOWERMOSFET

TYPICALRDS(on)=0.009Ω EXCEPTIONALdv/dtCAPABILITY 100AVALANCHETESTED LOWTHRESHOLDDRIVE DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprim

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB75NF75L

N-channel75V-0.009廓-75A-D2PAKSTripFET??IIPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB75NF75L

N-Channel80V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

STP75NF75

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=80A@TC=25℃ •DrainSourceVoltage:VDSS=75V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.011Ω(Max) DESCRIPTION Suitableasprimaryswitchinadvancedhigh-efficiency,high-frequencyisolatedDC-DCconvertersforTelecomandComputerappl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP75NF75

N-channel75V-0.0095Q-80A-TO-220-TO-220FP-D2PAKSTripFET??IIPowerMOSFET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

STP75NF75

N-channel75V-0.0095廓-80A-TO-220-TO-220FP-D2PAKSTripFET??IIPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP75NF75

N-CHANNEL75V-0.0095ohm-80ATO-220/TO-220FP/D짼PAKSTripFET??IIPOWERMOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET™processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecom

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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