首页 >P6SMB440AG-SMB-R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMDTransientVoltageSuppressorDiodes | DiotecDiotec Semiconductor 德欧泰克 | Diotec | ||
SMDTransientVoltageSuppressorDiodes | DiotecDiotec Semiconductor 德欧泰克 | Diotec | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
TransientVoltageSuppressorDiodeSeries | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
Excellentclampingcapability Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD | SEMITECHShanghai Semitech Semiconductor Co., Ltd 海晨启半导体上海晨启半导体有限公司 | SEMITECH | ||
TransientVoltageSuppressors(TVS) Features ■Forsurfacemountedapplicationsinordertooptimizeboardspace ■Lowprofilepackage ■Built-instrainrelief ■Glasspassivatedjunction ■Lowinductance ■Excellentclampingcapability ■600Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0. | YAGEOYageo Corporation 国巨台湾国巨股份有限公司 | YAGEO | ||
600WSURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR GlassPassivatedDieConstruction 600WPeakPulsePowerDissipation 5.8V–513VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | WTE | ||
TransientVoltageSuppressors(TVS)DataSheet eatures Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 600Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0.01% | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
6.8To600V600WSurfaceMountTransientVoltageSuppressors(TVS) Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability TypicalIRlessthan5μAabove10V 600WPeakpowercapabilityat10×1000μswaveformRepetition rate(d | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI | ||
Lowprofilepackage FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha 10/1000μswaveform,repetitiverate(duty cycle):0.01 •Excellentclampingcapability •Veryfast | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW |
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