首页 >P6SMB22A-H>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SurfaceMountTransientVoltageSuppressors | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | ||
TransientVoltageSuppressorDiodeSeries | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
SurfaceMountTransientVoltageSuppressor FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
Excellentclampingcapability Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD | SEMITECHShanghai Semitech Semiconductor Co., Ltd 海晨启半导体上海晨启半导体有限公司 | SEMITECH | ||
TransientVoltageSuppressorDiodeSeries | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
Surfacemounttransientvoltagesuppressorpower600watts | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY | ||
Excellentclampingcapability Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD | SEMITECHShanghai Semitech Semiconductor Co., Ltd 海晨启半导体上海晨启半导体有限公司 | SEMITECH | ||
TransientVoltageSuppressors Features 1.Halogen-free 2.Rohscompliant 3.Typicalmaximumtemperaturecoefficient 4.ΔVBR=0.1xVBR@25°CxΔT 5.GlasspassivatedChipjunctioninDO-214AApackage 6.600Wpeakpulsecapadilityat10×1000μswaveform,repetitionrate(dutycycles):0.01 7.Fastresponsetime:typicallyle | RUILONRUILONGYUAN ELECTRONICS 瑞隆源深圳市瑞隆源电子有限公司 | RUILON |
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