N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET

■ TYPICAL RDS(on) = 0.93 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established st

文件：408.02 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK50Z；Package：TO-220；N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET

■ TYPICAL RDS(on) = 0.93 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established st

文件：408.02 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET

■ TYPICAL RDS(on) = 0.93 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established st

文件：408.02 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.93ohm - 5.6A TO-220/TO-220FP/DPAK

文件：404.72 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.6A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.83 Kbytes 页数：2 Pages

ISC

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