| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
P6N60FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
6.2Amps,600/650VoltsN-CHANNELMOSFET DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELPOWERMOSFET | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
N-Channel600V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
AvalancheEnergySpecified DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage-:VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=1.2Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleDriveRequirements | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelPowerMOSFET | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | DYELEC | ||
6.2Amps,600/650VoltsN-CHANNELMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
6Amps,600VoltsN-CHANNELMOSFET | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
6.2A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELPOWERMOSFET | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
N-CHANNELMOSFET | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
6A600VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
6Amps,600VoltsN-CHANNELMOSFET | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELPOWERMOSFET | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-TO-220 |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
ST |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
TECCOR/LITT |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
ST/意法 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
ST/意法 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
ST |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ST |
TO-220 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST/意法 |
22+ |
TO-220 |
98282 |
终端免费提供样品 可开13%增值税发票 |
询价 |
相关规格书
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