首页 >P6185>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
High-SpeedUSBandAudioDPDTSwitch | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-40A,RDS(ON)=19mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=25mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-36A,RDS(ON)=20mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=26mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-40A,RDS(ON)=19mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=25mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-36A,RDS(ON)=20mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=26mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-53A,RDS(ON)=18mW@VGS=-10V. RDS(ON)=23mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
60VP-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
60VP-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
MetallizedPolyesterFilmCapacitor | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
MetallizedPolyesterFilmCapacitor | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic |
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