首页 >P60B6ELMOS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET | SHINDENGENShindengen Electric Mfg.Co.Ltd 日本新电元工业株式会社 | SHINDENGEN | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | SHINDENGENShindengen Electric Mfg.Co.Ltd 日本新电元工业株式会社 | SHINDENGEN | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTSILICONZENERDIODES VOLTAGERANGE:3.3-200V POWER:5.0Watts Features •CompleteVoltageRange3.3to200Volts •Highpeakreversepowerdissipation •Highreliability •Lowleakagecurrent | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
SURFACEMOUNTSILICONZENERDIODES | SUNMATE |
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