Complementary Enhancement Mode Field Effect Transistor

文件：584.62 Kbytes 页数：9 Pages

AOSMD

万国半导体

丝印：P605150；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P605180；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P605250；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P605280；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P605300；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P605330；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P605500；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P605ADJ；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

压力传感器

Whitman