首页 >P5NB80FP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNEL800V-1.8ohm-5A-TO-220/TO-220FPPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances. ■TYPICALRDS(on)=1.8Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■VERYLOWINTRINSICCAPACITANCES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL800V-1.8ohm-5A-D2PAKPowerMESH]MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL800V-1.8ohm-5A-TO-220/TO-220FPPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances. ■TYPICALRDS(on)=1.8Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■VERYLOWINTRINSICCAPACITANCES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.0A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNEL800V-1.8ohm-5A-TO-220/TO-220FPPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances. ■TYPICALRDS(on)=1.8Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■VERYLOWINTRINSICCAPACITANCES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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