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5N120

5A,1200VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC5N120provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. FEATURES0 *RDS(ON)≤3.1Ω@VGS=10V,ID=2.5A *LowReverseTransferCapacitance *FastSwitchingCapabilit

UTCUnisonic Technologies

友顺友顺科技股份有限公司

5N120BND

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

5N120BND

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG5N120BND

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTG5N120BND

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG5N120CND

25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP5N120

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP5N120

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP5N120BN

21A,1200V,NPTSeriesN-ChannelIGBTs

TheHGTP5N120BNandtheHGT1S5N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateco

Intersil

Intersil Corporation

HGTP5N120BND

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
ST
23+
TO-220
16900
正规渠道,只有原装!
询价
ST
25+
TO-220
16900
原装,请咨询
询价
ST
2511
TO-220
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
ST/意法
23+
TO-220
65000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
24+
400
询价
FAIRCHILD/仙童
TO-220
22+
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
23+
TO-220
6000
原装正品,支持实单
询价
ST/意法
23
询价
FAIRCHILD
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ST/意法
22+
TO-220
98435
询价
更多P5N120供应商 更新时间2025-7-29 16:30:00