isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：313.06 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.65Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：313.08 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：313.21 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.4Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.88 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：182.34 Kbytes 页数：4 Pages

SHINDENGEN

N-Channel MOSFET uses advanced trench technology

文件：979.56 Kbytes 页数：4 Pages

DOINGTER

杜因特

Power MOSFETs 500V, 5A, N-channel

文件：1.67801 Mbytes 页数：8 Pages

SHINDENGEN

Power MOSFET

文件：183.86 Kbytes 页数：4 Pages

SHINDENGEN

Power MOSFETs 900V, 5A, N-channel

文件：1.76306 Mbytes 页数：7 Pages

SHINDENGEN

包装：散装 类别：电容器 微调器，可变电容器 描述：CAP TRIMMER 0.6-4.5PF 500V SMD

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