首页 >P50B60PD1>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.35V（Max)@IC=33A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·Ultrafasttailcurrentshutoff ·AutomotiveChargers ·HighVoltageAuxiliaries | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE VCES=600V VCE(on)typ.=2.00V @VGE=15VIC=33A Features •NPTTechnology,PositiveTemperatureCoefficient •LowerVCE(SAT) •LowerParasiticCapacitances •MinimalTailCurrent •HEXFREDUltraFastSoft-RecoveryCo-PackDiode •TighterDistributionofParameter | IRF International Rectifier | IRF | ||
WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE VCES=600V VCE(on)typ.=2.00V @VGE=15VIC=33A EquivalentMOSFETParameters RCE(on)typ.=61mΩ ID(FETequivalent)=50A Features •NPTTechnology,PositiveTemperatureCoefficient •LowerVCE(SAT) •LowerParasiticCapacitances •MinimalTailCurrent •H | IRF International Rectifier | IRF | ||
WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF |
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